VS-25ETS08S-M3

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 25A TO263AB

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 800V 25A TO263AB

Technical Specifications

Parameters and characteristics for this part

Specification	VS-25ETS08S-M3

Current - Average Rectified (Io)	25 A
Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-263AB (D2PAK)
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.14 V

Part	Supplier Device Package	Current - Reverse Leakage @ Vr	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Mounting Type	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division VS-25ETS08STRRPBF	TO-263AB (D2PAK)	100 µA	Standard	800 V	25 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	-40 °C	200 mA 500 ns	Surface Mount	1.14 V
Vishay General Semiconductor - Diodes Division VS-25ETS08S-M3	TO-263AB (D2PAK)	100 µA	Standard	800 V	25 A	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	150 °C	-40 °C	200 mA 500 ns	Surface Mount	1.14 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 800 V 25A Surface Mount TO-263AB (D2PAK)

Technical documentation and resources