ZXTD3M832TA

Obsolete

Diodes Inc

TRANS 2PNP 40V 3A 8MLP

Search across all available documentation for this part.

Obsolete

Diodes Inc

TRANS 2PNP 40V 3A 8MLP

Technical Specifications

Parameters and characteristics for this part

Specification	ZXTD3M832TA

Current - Collector (Ic) (Max) [Max]	3 A
Current - Collector Cutoff (Max) [Max]	25 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	60 hFE
Frequency - Transition	190 MHz
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-VDFN Exposed Pad
Power - Max [Max]	1.7 W
Supplier Device Package	8-MLP (3x2)
Transistor Type	2 PNP (Dual)
Vce Saturation (Max) @ Ib, Ic [Max]	370 mV
Voltage - Collector Emitter Breakdown (Max)	40 V

Part	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Supplier Device Package	Frequency - Transition	Current - Collector Cutoff (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Power - Max [Max]	Voltage - Collector Emitter Breakdown (Max)	Vce Saturation (Max) @ Ib, Ic [Max]	Transistor Type
Diodes Inc ZXTD3M832TA	3 A	60 hFE	8-MLP (3x2)	190 MHz	25 nA	-55 °C	150 °C	Surface Mount	8-VDFN Exposed Pad	1.7 W	40 V	370 mV	2 PNP (Dual)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor Array 2 PNP (Dual) 40V 3A 190MHz 1.7W Surface Mount 8-MLP (3x2)

Technical documentation and resources

No documents available