VS-VSKE166/12PBF

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Vishay General Semiconductor - Diodes Division

DIODE GP 1.2KV 165A INT-A-PAK

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Vishay General Semiconductor - Diodes Division

DIODE GP 1.2KV 165A INT-A-PAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-VSKE166/12PBF

Current - Average Rectified (Io)	165 A
Current - Reverse Leakage @ Vr	20 mA
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	INT-A-PAK (3)
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	INT-A-PAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Speed	Speed	Current - Average Rectified (Io)	Mounting Type	Technology	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr
Vishay General Semiconductor - Diodes Division VS-VSKE166/04PBF	400 V	INT-A-PAK	Standard Recovery >500ns	200 mA	165 A	Chassis Mount	Standard	INT-A-PAK (3)
Vishay General Semiconductor - Diodes Division VS-VSKE166/12PBF	1.2 kV	INT-A-PAK	Standard Recovery >500ns	200 mA	165 A	Chassis Mount	Standard	INT-A-PAK (3)	150 °C	-40 °C	20 mA
Vishay General Semiconductor - Diodes Division VS-VSKE166/08PBF	800 V	INT-A-PAK	Standard Recovery >500ns	200 mA	165 A	Chassis Mount	Standard	INT-A-PAK (3)	150 °C	-40 °C	20 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	15	$ 48.84

General part information

Diode 1200 V 165A Chassis Mount INT-A-PAK

Technical documentation and resources