DB103G

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 200V 1A DB

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GeneSiC Semiconductor

BRIDGE RECT 1PHASE 200V 1A DB

Technical Specifications

Parameters and characteristics for this part

Specification	DB103G

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	10 µA
Diode Type	Single Phase
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	4-EDIP
Package / Case	0.321 in
Package / Case	8.15 mm
Supplier Device Package	DB
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	1.1 V
Voltage - Peak Reverse (Max) [Max]	200 V

Part	Package / Case	Package / Case	Package / Case	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Technology	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - Peak Reverse (Max) [Max]	Diode Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package
GeneSiC Semiconductor DB103G	4-EDIP	0.321 in	8.15 mm	1.1 V	1 A	Standard	10 µA	Through Hole	200 V	Single Phase	-55 °C	150 °C	DB

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General part information

Bridge Rectifier Single Phase Standard 200 V Through Hole DB

Technical documentation and resources