2N6249T1

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Microsemi Corporation

NPN TRANSISTOR

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Microsemi Corporation

NPN TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	2N6249T1

Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	10
Mounting Type	Through Hole
Operating Temperature [Max]	200 °C
Operating Temperature [Min]	-65 ░C
Package / Case	TO-254-3, TO-254AA
Power - Max [Max]	6 W
Supplier Device Package	TO-254AA
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	200 V

Part	Transistor Type	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Package / Case	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Qualification	Grade
Microsemi Corporation 2N6249T1	NPN	6 W	1 mA	Through Hole	200 V	-65 ░C	200 °C	TO-254AA	TO-254-3 TO-254AA	1.5 V	10
Microsemi Corporation JAN2N6249	NPN	6 W	1 mA	Through Hole	200 V				TO-3	1.5 V	10	MIL-PRF-19500/510	Military
Microsemi Corporation JANTXV2N6249	NPN	6 W	1 mA	Through Hole	200 V				TO-3	1.5 V	10	MIL-PRF-19500/510	Military

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN 200 V 10 A 6 W Through Hole TO-254AA

Technical documentation and resources

No documents available