SB160E-G

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Comchip Technology

DIODE SCHOTTKY 60V 1A DO41

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Comchip Technology

DIODE SCHOTTKY 60V 1A DO41

Technical Specifications

Parameters and characteristics for this part

Specification	SB160E-G

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	500 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Speed	200 mA, 500 ns
Supplier Device Package	DO-41
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	700 mV

Part	Current - Average Rectified (Io)	Speed	Technology	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
Comchip Technology SB160E-G	1 A	200 mA 500 ns	Schottky	500 µA	60 V	DO-41	700 mV	Through Hole	Axial DO-204AL DO-41	150 °C	-65 C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 60 V 1A Through Hole DO-41

Technical documentation and resources

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