SP8M10TB

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Rohm Semiconductor

MOSFET N/P-CH 30V 7A/4.5A 8SOP

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Rohm Semiconductor

MOSFET N/P-CH 30V 7A/4.5A 8SOP

Technical Specifications

Parameters and characteristics for this part

Specification	SP8M10TB

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	7 A, 4.5 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs	8.4 nC
Input Capacitance (Ciss) (Max) @ Vds	600 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	25 mOhm
Supplier Device Package	8-SOP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Rds On (Max) @ Id, Vgs	Technology	Power - Max [Max]	Package / Case	Package / Case [y]	Package / Case [x]	FET Feature	Operating Temperature	Current - Continuous Drain (Id) @ 25°C	Configuration	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id [Max]	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs
Rohm Semiconductor SP8M10TB	25 mOhm	MOSFET (Metal Oxide)	2 W	8-SOIC	3.9 mm	0.154 in	Logic Level Gate	150 °C	4.5 A 7 A	N and P-Channel	600 pF	2.5 V	Surface Mount	8-SOP	30 V	8.4 nC

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 7A, 4.5A 2W Surface Mount 8-SOP

Technical documentation and resources

No documents available