VS-1N5818

Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 30V 1A DO204AL

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Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 30V 1A DO204AL

Technical Specifications

Parameters and characteristics for this part

Specification	VS-1N5818

Current - Average Rectified (Io)	1 A
Current - Reverse Leakage @ Vr	1 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-204AL, DO-41, Axial
Speed	200 mA, 500 ns
Supplier Device Package	DO-204AL (DO-41)
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	550 mV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Technology	Package / Case	Current - Reverse Leakage @ Vr	Mounting Type	Supplier Device Package	Current - Average Rectified (Io)	Capacitance @ Vr, F	Voltage - Forward (Vf) (Max) @ If
Vishay General Semiconductor - Diodes Division 1N5818-E3/53	125 °C	-65 C	30 V	200 mA 500 ns	Schottky	Axial DO-204AL DO-41	1 mA	Through Hole	DO-204AL (DO-41)	1 A	110 pF	875 mV
Vishay General Semiconductor - Diodes Division VS-1N5818	125 °C	-65 C	30 V	200 mA 500 ns	Schottky	Axial DO-204AL DO-41	1 mA	Through Hole	DO-204AL (DO-41)	1 A		550 mV
Vishay General Semiconductor - Diodes Division 1N5818-E3/1	125 °C	-65 C	30 V	200 mA 500 ns	Schottky	Axial DO-204AL DO-41	1 mA	Through Hole	DO-204AL (DO-41)	1 A		550 mV
Vishay General Semiconductor - Diodes Division 1N5818-E3/73	125 °C	-65 C	30 V	200 mA 500 ns	Schottky	Axial DO-204AL DO-41	1 mA	Through Hole	DO-204AL (DO-41)	1 A		550 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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General part information

Diode 30 V 1A Through Hole DO-204AL (DO-41)

Technical documentation and resources