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2ED21814S06JXUMA1 - 14-SOIC (0.154", 3.90mm Width)

2ED21814S06JXUMA1

Active
Infineon Technologies

THE 2ED21814S06J IS A 650 V 2.5 A HIGH AND LOW SIDE GATE DRIVER WITH HIGH CURRENT AND HIGH SPEED IN DSO-14 PACKAGE

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2ED21814S06JXUMA1 - 14-SOIC (0.154", 3.90mm Width)

2ED21814S06JXUMA1

Active
Infineon Technologies

THE 2ED21814S06J IS A 650 V 2.5 A HIGH AND LOW SIDE GATE DRIVER WITH HIGH CURRENT AND HIGH SPEED IN DSO-14 PACKAGE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification2ED21814S06JXUMA1
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]2.5 A
Current - Peak Output (Source, Sink) [custom]2.5 A
Driven ConfigurationHigh-Side and Low-Side
Gate TypeN-Channel MOSFET, IGBT
High Side Voltage - Max (Bootstrap) [Max]675 V
Input TypeNon-Inverting
Logic Voltage - VIL, VIH [custom]1.1 V
Logic Voltage - VIL, VIH [custom]1.7 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case14-SOIC
Package / Case [x]0.154 in
Package / Case [y]3.9 mm
Rise / Fall Time (Typ) [custom]15 ns
Rise / Fall Time (Typ) [custom]15 ns
Supplier Device PackagePG-DSO-14
Voltage - Supply [Max]20 V
Voltage - Supply [Min]10 VDC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 2.33
10$ 2.10
25$ 1.98
100$ 1.68
250$ 1.58
500$ 1.38
1000$ 1.15
Digi-Reel® 1$ 2.33
10$ 2.10
25$ 1.98
100$ 1.68
250$ 1.58
500$ 1.38
1000$ 1.15
Tape & Reel (TR) 2500$ 1.07
5000$ 1.03
NewarkEach (Supplied on Cut Tape) 1$ 2.20
10$ 1.48
25$ 1.42
50$ 1.38
100$ 1.33
250$ 1.26
500$ 1.21
1000$ 1.18

Description

General part information

2ED21814 Series

650 Vhigh and low sidegate driver with high current, and high speed to driveMOSFETandIGBT,with typical 2.5 A sink and source current in DSO-14 package. The smaller DSO-8 package version is also available:2ED2181S06F. Based on ourSOI-technology, having excellent ruggedness and noise immunity against negative transient voltages on VS pin. No parasitic thyristor structures present in the device, hence no parasitic latch up at all temperature and voltage conditions.

Documents

Technical documentation and resources