RQ1A070ZPTR

NRND

Rohm Semiconductor

MOSFET P-CH 12V 7A TSMT8

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NRND

Rohm Semiconductor

MOSFET P-CH 12V 7A TSMT8

Technical Specifications

Parameters and characteristics for this part

Specification	RQ1A070ZPTR

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	12 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Input Capacitance (Ciss) (Max) @ Vds	7400 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs	12 mOhm
Supplier Device Package	TSMT8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Operating Temperature	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Vgs (Max)	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Supplier Device Package	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Rohm Semiconductor RQ1A070ZPTR	150 °C	P-Channel	MOSFET (Metal Oxide)	7 A	700 mW	Surface Mount	10 V	1 V	12 mOhm	58 nC	1.5 V 4.5 V	TSMT8	12 V	7400 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 12 V 7A (Ta) 700mW (Ta) Surface Mount TSMT8

Technical documentation and resources

No documents available