BAT43W RHG

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 200MA SOD123

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 30V 200MA SOD123

Technical Specifications

Parameters and characteristics for this part

Specification	BAT43W RHG

Capacitance @ Vr, F	10 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	500 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	SOD-123
Reverse Recovery Time (trr)	5 ns
Speed	Any Speed
Speed	200 mA
Supplier Device Package	SOD-123
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	30 V
Voltage - Forward (Vf) (Max) @ If	650 mV

Part	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Speed	Speed	Voltage - Forward (Vf) (Max) @ If	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Technology	Capacitance @ Vr, F	Mounting Type	Supplier Device Package	Voltage - DC Reverse (Vr) (Max) [Max]
Taiwan Semiconductor Corporation BAT43X RKG	5 ns	200 mA	Any Speed	200 mA	1 V	SC-79 SOD-523	150 °C	-55 °C	500 nA	Schottky	10 pF	Surface Mount	SOD-523F	30 V
Taiwan Semiconductor Corporation BAT43W RHG	5 ns	200 mA	Any Speed	200 mA	650 mV	SOD-123	125 °C	-55 °C	500 nA	Schottky	10 pF	Surface Mount	SOD-123	30 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 30 V 200mA Surface Mount SOD-123

Technical documentation and resources