PJS6405_S1_00001

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Panjit International Inc.

TRANS MOSFET P-CH 30V 4.6A 6-PIN SOT-23 T/R

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Active

Panjit International Inc.

TRANS MOSFET P-CH 30V 4.6A 6-PIN SOT-23 T/R

Technical Specifications

Parameters and characteristics for this part

Specification	PJS6405_S1_00001

Current - Continuous Drain (Id) @ 25°C	4.6 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	5.2 nC
Input Capacitance (Ciss) (Max) @ Vds	417 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max) [Max]	2 W
Rds On (Max) @ Id, Vgs	72 mOhm
Supplier Device Package	SOT-23-6
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

Part	Power Dissipation (Max) [Max]	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs	FET Type	Supplier Device Package	Package / Case	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds	Vgs (Max)
Panjit International Inc. PJS6405_S1_00001	2 W	Surface Mount	30 V	-55 °C	150 °C	72 mOhm	P-Channel	SOT-23-6	SOT-23-6	4.5 V 10 V	4.6 A	5.2 nC	MOSFET (Metal Oxide)	2.1 V	417 pF	20 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

RDs(ON) , VGS@-10V. lD@-4.6A<72mO

RDs(ON) , VGs@-4.5V, ID@-3.0A<96mO

Advanced Trench Process Technology

Technical documentation and resources