2N2906

Obsolete

ON Semiconductor

TRANS PNP 40V 0.6A TO18

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Obsolete

ON Semiconductor

TRANS PNP 40V 0.6A TO18

Technical Specifications

Parameters and characteristics for this part

Specification	2N2906

Current - Collector (Ic) (Max) [Max]	600 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	40
Mounting Type	Through Hole
Package / Case	TO-18-3 Metal Can, TO-206AA
Power - Max [Max]	400 mW
Supplier Device Package	TO-18
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	1.6 V
Voltage - Collector Emitter Breakdown (Max) [Max]	40 V

Part	Transistor Type	Supplier Device Package	Package / Case	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Mounting Type	Power - Max [Max]
ON Semiconductor 2N2906	PNP	TO-18	TO-18-3 Metal Can TO-206AA	600 mA	40 V	1.6 V	40	Through Hole	400 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Bipolar (BJT) Transistor PNP 40 V 600 mA 400 mW Through Hole TO-18

Technical documentation and resources