2SD1664T100Q

NRND

Rohm Semiconductor

TRANS GP BJT NPN 32V 1A 4-PIN(3+TAB) MPT T/R

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NRND

Rohm Semiconductor

TRANS GP BJT NPN 32V 1A 4-PIN(3+TAB) MPT T/R

Technical Specifications

Parameters and characteristics for this part

Specification	2SD1664T100Q

Current - Collector (Ic) (Max) [Max]	1 A
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	120
Frequency - Transition	150 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	400 mV
Voltage - Collector Emitter Breakdown (Max)	32 V

Part	Transistor Type	Package / Case	Current - Collector (Ic) (Max) [Max]	Frequency - Transition	Mounting Type	Operating Temperature	Voltage - Collector Emitter Breakdown (Max)	Current - Collector Cutoff (Max) [Max]	Power - Max [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Vce Saturation (Max) @ Ib, Ic
Rohm Semiconductor 2SD1664T100P	NPN	TO-243AA	1 A	150 MHz	Surface Mount	150 °C	32 V	500 nA	2 W	82	400 mV
Rohm Semiconductor 2SD1664T100Q	NPN	TO-243AA	1 A	150 MHz	Surface Mount	150 °C	32 V	500 nA	2 W	120	400 mV
Rohm Semiconductor 2SD1664T100R	NPN	TO-243AA	1 A	150 MHz	Surface Mount	150 °C	32 V	500 nA	2 W	180 hFE	400 mV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Low VCE(sat), VCE(sat) = 0.15V (typical). (IC / IB = 500mA/50mA)

Epitaxial Planar Type structure

NPN Silicon Transistor

Technical documentation and resources