VQ1001P-E3

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET 4N-CH 30V 0.83A 14DIP

Search across all available documentation for this part.

Obsolete

Vishay General Semiconductor - Diodes Division

MOSFET 4N-CH 30V 0.83A 14DIP

Technical Specifications

Parameters and characteristics for this part

Specification	VQ1001P-E3

Configuration	4 N-Channel
Current - Continuous Drain (Id) @ 25°C	830 mA
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Input Capacitance (Ciss) (Max) @ Vds	110 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Power - Max [Max]	2 W
Rds On (Max) @ Id, Vgs	1.75 Ohm
Supplier Device Package	14-DIP
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id [Max]	2.5 V

Part	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id [Max]	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	FET Feature	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Configuration	Supplier Device Package	Technology
Vishay General Semiconductor - Diodes Division VQ1001P-E3	1.75 Ohm	2.5 V	830 mA	Through Hole	30 V	110 pF	Logic Level Gate	-55 °C	150 °C	2 W	4 N-Channel	14-DIP	MOSFET (Metal Oxide)

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Mosfet Array 30V 830mA 2W Through Hole 14-DIP

Technical documentation and resources

No documents available