AOI600A60

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 8A TO251A

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 8A TO251A

Technical Specifications

Parameters and characteristics for this part

Specification	AOI600A60

Current - Continuous Drain (Id) @ 25°C	8 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.5 nC
Input Capacitance (Ciss) (Max) @ Vds	608 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	96 W
Rds On (Max) @ Id, Vgs	600 mOhm
Supplier Device Package	TO-251A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Technology	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs	Vgs (Max)	Drain to Source Voltage (Vdss)	Supplier Device Package
Alpha & Omega Semiconductor Inc. AOI600A60	Through Hole	600 mOhm	10 V	TO-251-3 Stub Leads IPAK	N-Channel	-55 °C	150 °C	608 pF	3.5 V	MOSFET (Metal Oxide)	8 A	96 W	11.5 nC	20 V	600 V	TO-251A
Alpha & Omega Semiconductor Inc. AOI600A70	Through Hole	600 mOhm	10 V	TO-251-3 Stub Leads IPAK	N-Channel	-55 °C	150 °C	870 pF	3.5 V	MOSFET (Metal Oxide)	8.5 A	104 W	15.5 nC	20 V	700 V	TO-251A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	3500	$ 0.50

General part information

N-Channel 600 V 8A (Tc) 96W (Tc) Through Hole TO-251A

Technical documentation and resources