VS-20ATS12-M3

Active

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 20A TO220-3

Search across all available documentation for this part.

Active

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1.2KV 20A TO220-3

Technical Specifications

Parameters and characteristics for this part

Specification	VS-20ATS12-M3

Current - Reverse Leakage @ Vr	100 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-220-3
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	TO-220-3
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.1 V

Part	Package / Case	Speed	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Qualification	Grade	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Technology	Mounting Type
Vishay General Semiconductor - Diodes Division VS-20ATS12HM3	TO-220-3	Standard Recovery >500ns	200 mA	TO-220-3	100 µA	AEC-Q101	Automotive	1.1 V	1.2 kV	150 °C	-40 °C	Standard	Through Hole
Vishay General Semiconductor - Diodes Division VS-20ATS12-M3	TO-220-3	Standard Recovery >500ns	200 mA	TO-220-3	100 µA			1.1 V	1.2 kV	150 °C	-40 °C	Standard	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	8000	$ 1.46

General part information

Diode 1200 V 20A Through Hole TO-220-3

Technical documentation and resources