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RQ3P300BHTB1 - ROHM Semiconductor-RQ3P300BHTB1 MOSFETs Trans MOSFET N-CH 100V 39A 8-Pin HSMT EP T/R

RQ3P300BHTB1

Active

Rohm Semiconductor

MOSFET, N-CH, 100V, 39A, HSMT ROHS COMPLIANT: YES

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Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Moisture Sensitivity Level - Transistors +24

RQ3P300BHTB1 - ROHM Semiconductor-RQ3P300BHTB1 MOSFETs Trans MOSFET N-CH 100V 39A 8-Pin HSMT EP T/R

RQ3P300BHTB1

Active

Rohm Semiconductor

MOSFET, N-CH, 100V, 39A, HSMT ROHS COMPLIANT: YES

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Moisture Sensitivity Level - Transistors +24

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RQ3P300BHTB1

Current - Continuous Drain (Id) @ 25°C	39 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	36 nC
Input Capacitance (Ciss) (Max) @ Vds	2040 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	32 W
Rds On (Max) @ Id, Vgs	15.5 mOhm
Supplier Device Package	8-HSMT (3.2x3)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 3.17
		10	$ 2.06
		100	$ 1.43
		500	$ 1.16
		1000	$ 1.07
	Digi-Reel®	1	$ 3.17
		10	$ 2.06
		100	$ 1.43
		500	$ 1.16
		1000	$ 1.07
	Tape & Reel (TR)	3000	$ 0.98
Newark	Each	1	$ 3.19
		10	$ 2.09
		100	$ 1.46
		500	$ 1.19
		1000	$ 1.09
		2500	$ 1.05
		6000	$ 1.02

Description

General part information

RQ3P300BH Series

RQ3P300BH is a power MOSFET with low on - resistance, suitable for switching.

Documents

Technical documentation and resources

Technical Data Sheet EN

Moisture Sensitivity Level - Transistors

Package Information

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Notes for Temperature Measurement Using Thermocouples

HSMT8(TB1) Explanation for Marking

Package Information

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Condition of Soldering / Land Pattern Reference

Package Information

PCB Layout Thermal Design Guide

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

List of Transistor Package Thermal Resistance

Measurement Method and Usage of Thermal Resistance RthJC

About Flammability of Materials

Environmental Data

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

Types and Features of Transistors

Application Note

What Is Thermal Design

Part Explanation

Application Note

Two-Resistor Model for Thermal Simulation

RQ3P300BH ESD Data

Characteristics Data

HSMT8(TB1) Taping Information

Package Information

What is a Thermal Model? (Transistor)

Method for Monitoring Switching Waveform

Schematic Design & Verification

About Export Regulations

Export Information

RQ3P300BH Data Sheet

RQ3P300BH Series

Nch 100V 39A, HSMT8, Power MOSFET

Part	Technology	Power Dissipation (Max)	Package / Case	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature	Drain to Source Voltage (Vdss)	FET Type	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs
Rohm Semiconductor RQ3P300BHTB1	MOSFET (Metal Oxide)	32 W	8-PowerVDFN	20 V	39 A	36 nC	Surface Mount	150 °C	100 V	N-Channel	8-HSMT (3.2x3)	6 V 10 V	2040 pF	15.5 mOhm