MBR20L120CT

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Taiwan Semiconductor Corporation

DIODE ARR SCHOT 120V 20A TO220AB

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Taiwan Semiconductor Corporation

DIODE ARR SCHOT 120V 20A TO220AB

Technical Specifications

Parameters and characteristics for this part

Specification	MBR20L120CT

Current - Average Rectified (Io) (per Diode)	20 A
Current - Reverse Leakage @ Vr	20 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	120 V
Voltage - Forward (Vf) (Max) @ If	900 mV

Part	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io) (per Diode)	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Speed	Supplier Device Package	Diode Configuration	Technology	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If
Taiwan Semiconductor Corporation MBR20H200CT	175 ░C	-55 C	20 A	Through Hole	200 V	200 mA 500 ns	TO-220AB	1 Pair Common Cathode	Schottky	5 µA	TO-220-3	970 mV
Taiwan Semiconductor Corporation MBR20L120CT	150 °C	-55 °C	20 A	Through Hole	120 V	200 mA 500 ns	TO-220AB	1 Pair Common Cathode	Schottky	20 µA	TO-220-3	900 mV

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General part information

Diode Array 1 Pair Common Cathode 120 V 20A Through Hole TO-220-3

Technical documentation and resources