TPCC8136.LQ

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 9.4A 8TSON

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Toshiba Semiconductor and Storage

MOSFET P-CH 20V 9.4A 8TSON

Technical Specifications

Parameters and characteristics for this part

Specification	TPCC8136.LQ

Current - Continuous Drain (Id) @ 25°C	9.4 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.8 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	36 nC
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max)	700 mW, 18 W
Rds On (Max) @ Id, Vgs [Max]	16 mOhm
Supplier Device Package	8-TSON Advance (3.1x3.1)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.2 V

Part	Operating Temperature	Power Dissipation (Max)	Technology	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Mounting Type	Supplier Device Package	Drain to Source Voltage (Vdss)	Package / Case	Vgs (Max)
Toshiba Semiconductor and Storage TPCC8136.LQ	150 °C	18 W 700 mW	MOSFET (Metal Oxide)	36 nC	1.2 V	9.4 A	16 mOhm	1.8 V 4.5 V	P-Channel	Surface Mount	8-TSON Advance (3.1x3.1)	20 V	8-PowerVDFN	12 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 20 V 9.4A (Ta) 700mW (Ta), 18W (Tc) Surface Mount 8-TSON Advance (3.1x3.1)

Technical documentation and resources

No documents available