VS-1N3624

Active

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 700V 12A DO203AA

Search across all available documentation for this part.

Active

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 700V 12A DO203AA

Technical Specifications

Parameters and characteristics for this part

Specification	VS-1N3624

Current - Average Rectified (Io)	12 A
Current - Reverse Leakage @ Vr	900 µA
Mounting Type	Chassis, Stud Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	Stud, DO-203AA, DO-4
Speed	200 mA, 500 ns
Supplier Device Package	DO-203AA
Supplier Device Package	DO-4
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	700 V
Voltage - Forward (Vf) (Max) @ If	1.35 V

Part	Package / Case	Speed	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Supplier Device Package	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)
Vishay General Semiconductor - Diodes Division VS-1N3624R	DO-203AA DO-4 Stud	200 mA 500 ns	900 µA	200 C	-65 C	DO-203AA	DO-4	1.35 V	Chassis Stud Mount	Reverse Polarity Standard	700 V	12 A
Vishay General Semiconductor - Diodes Division VS-1N3624	DO-203AA DO-4 Stud	200 mA 500 ns	900 µA	200 C	-65 C	DO-203AA	DO-4	1.35 V	Chassis Stud Mount	Standard	700 V	12 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	100	$ 3.87

General part information

Diode 700 V 12A Chassis, Stud Mount DO-203AA (DO-4)

Technical documentation and resources

No documents available