1N5822-E3/51

Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 3A DO201AD

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Obsolete

Vishay General Semiconductor - Diodes Division

DIODE SCHOTTKY 40V 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	1N5822-E3/51

Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	2 mA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-65 C
Package / Case	DO-201AD, Axial
Speed	200 mA, 500 ns
Supplier Device Package	DO-201AD
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	40 V
Voltage - Forward (Vf) (Max) @ If	525 mV

Part	Voltage - Forward (Vf) (Max) @ If	Current - Average Rectified (Io)	Package / Case	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Mounting Type
Vishay General Semiconductor - Diodes Division 1N5822-E3/73	525 mV	3 A	DO-201AD Axial	Schottky	40 V	125 °C	-65 C	200 mA 500 ns	DO-201AD	2 mA	Through Hole
Vishay General Semiconductor - Diodes Division 1N5822-E3/51	525 mV	3 A	DO-201AD Axial	Schottky	40 V	125 °C	-65 C	200 mA 500 ns	DO-201AD	2 mA	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 40 V 3A Through Hole DO-201AD

Technical documentation and resources