VS-VSKJ166/08PBF

Active

Vishay General Semiconductor - Diodes Division

DIODE MOD GP 800V 82.5A INTAPAK

Search across all available documentation for this part.

Active

Vishay General Semiconductor - Diodes Division

DIODE MOD GP 800V 82.5A INTAPAK

Technical Specifications

Parameters and characteristics for this part

Specification	VS-VSKJ166/08PBF

Current - Average Rectified (Io) (per Diode)	82.5 A
Current - Reverse Leakage @ Vr	20 mA
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	INT-A-PAK (3)
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	INT-A-PAK
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V

Part	Technology	Diode Configuration	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Package / Case	Speed	Speed	Supplier Device Package	Current - Reverse Leakage @ Vr	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division VS-VSKJ166/16PBF	Standard	1 Pair Common Anode	82.5 A	150 °C	-40 °C	INT-A-PAK (3)	Standard Recovery >500ns	200 mA	INT-A-PAK	20 mA	Chassis Mount
Vishay General Semiconductor - Diodes Division VS-VSKJ166/08PBF	Standard	1 Pair Common Anode	82.5 A	150 °C	-40 °C	INT-A-PAK (3)	Standard Recovery >500ns	200 mA	INT-A-PAK	20 mA	Chassis Mount	800 V
Vishay General Semiconductor - Diodes Division VS-VSKJ166/04PBF	Standard	1 Pair Common Anode	82.5 A	150 °C	-40 °C	INT-A-PAK (3)	Standard Recovery >500ns	200 mA	INT-A-PAK	20 mA	Chassis Mount	400 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Anode 800 V 82.5A Chassis Mount INT-A-PAK (3)

Technical documentation and resources