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2ED1322S12MXUMA1 - 16-SOIC (0.295", 7.50mm Width)

2ED1322S12MXUMA1

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Infineon Technologies

THE 2ED1322S12M IS A 1200 V, 2.3 A SOURCE AND 4.6 A SINK CURRENT HALF-BRIDGE GATE DRIVER IC WITH INTEGRATED BOOTSTRAP DIODE AND OCP.

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2ED1322S12MXUMA1 - 16-SOIC (0.295", 7.50mm Width)

2ED1322S12MXUMA1

Active
Infineon Technologies

THE 2ED1322S12M IS A 1200 V, 2.3 A SOURCE AND 4.6 A SINK CURRENT HALF-BRIDGE GATE DRIVER IC WITH INTEGRATED BOOTSTRAP DIODE AND OCP.

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

Specification2ED1322S12MXUMA1
Channel TypeIndependent
Current - Peak Output (Source, Sink) [custom]2.3 A
Current - Peak Output (Source, Sink) [custom]4.6 A
Driven ConfigurationHalf-Bridge
Input TypeNon-Inverting
Logic Voltage - VIL, VIH [custom]1.1 V
Logic Voltage - VIL, VIH [custom]1.7 V
Mounting TypeSurface Mount
Number of Drivers2
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / Case16-SOIC
Package / Case [x]0.295 in
Package / Case [y]7.5 mm
Rise / Fall Time (Typ) [custom]48 ns
Rise / Fall Time (Typ) [custom]48 ns
Supplier Device PackagePG-DSO-16-U02
Voltage - Supply [Max]20 V
Voltage - Supply [Min]13 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 4.97
10$ 4.46
25$ 4.22
100$ 3.65
250$ 3.47
500$ 3.11
Digi-Reel® 1$ 4.97
10$ 4.46
25$ 4.22
100$ 3.65
250$ 3.47
500$ 3.11
Tape & Reel (TR) 1000$ 2.62
2000$ 2.49
NewarkEach (Supplied on Cut Tape) 1$ 4.76
10$ 3.62
25$ 3.33
50$ 3.17
100$ 3.02
250$ 2.86
500$ 2.78

Description

General part information

2ED1322 Series

EiceDRIVER™ 1200 Vhalf-bridge gate driver ICwith typical 2.3 A source, 4.6 A sink current and cross conduction prevention in DSO-16 (300mils) package for 1200 VSiC MOSFETandIGBTpower devices. The 2ED1322S12M is based on ourSOI-technologywhich has an excellent ruggedness and noise immunity against negative transient voltages on VS pin. Since the device has no parasitic thyristor structures, the design is very robust against parasitic latch up across the operating temperature and voltage range.

Documents

Technical documentation and resources