CR3F-100 BK

Obsolete

Central Semiconductor Corp

DIODE GEN PURP 1KV 3A DO201

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Obsolete

Central Semiconductor Corp

DIODE GEN PURP 1KV 3A DO201

Technical Specifications

Parameters and characteristics for this part

Specification	CR3F-100 BK

Capacitance @ Vr, F	40 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	125 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Axial, DO-27, DO-201AA
Reverse Recovery Time (trr)	500 ns
Speed	200 mA, 500 ns
Supplier Device Package	DO-201
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Package / Case	Voltage - Forward (Vf) (Max) @ If	Speed	Capacitance @ Vr, F	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Supplier Device Package	Technology	Current - Average Rectified (Io)
Central Semiconductor Corp CR3F-100 BK	1000 V	500 ns	5 µA	Axial DO-201AA DO-27	1.2 V	200 mA 500 ns	40 pF	-55 °C	125 °C	Through Hole	DO-201	Standard	3 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 1000 V 3A Through Hole DO-201

Technical documentation and resources