10ETS12FP
ObsoleteVishay General Semiconductor - Diodes Division
DIODE GP 1.2KV 10A TO220ACFP
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10ETS12FP
ObsoleteVishay General Semiconductor - Diodes Division
DIODE GP 1.2KV 10A TO220ACFP
Deep-Dive with AI
DocumentsDatasheet
Technical Specifications
Parameters and characteristics for this part
| Specification | 10ETS12FP |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 50 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -40 °C |
| Package / Case | TO-220-2 Full Pack |
| Speed | Standard Recovery >500ns |
| Speed | 200 mA |
| Supplier Device Package | TO-220AC Full Pack |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 1.2 kV |
| Voltage - Forward (Vf) (Max) @ If | 1.1 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
Description
General part information
10ETS12 Series
Diode 1200 V 10A Through Hole TO-220AC Full Pack
Documents
Technical documentation and resources