2N5210TA

Active

ON Semiconductor

TRANS NPN 50V 0.1A TO92-3

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Active

ON Semiconductor

TRANS NPN 50V 0.1A TO92-3

Technical Specifications

Parameters and characteristics for this part

Specification	2N5210TA

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	50 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Frequency - Transition	30 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	625 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic [Max]	700 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Amplifier Transistors

Part	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Power - Max [Max]	Frequency - Transition	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Current - Collector Cutoff (Max) [Max]	Vce Saturation (Max) @ Ib, Ic [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Transistor Type	Mounting Type	Current - Collector (Ic) (Max) [Max]
ON Semiconductor 2N5210TA	TO-226-3 TO-92-3	-55 °C	150 °C	625 mW	30 MHz	50 V	TO-92-3	50 nA	700 mV	200	NPN	Through Hole	100 mA
ON Semiconductor 2N5210BU	TO-226-3 TO-92-3	-55 °C	150 °C	625 mW	30 MHz	50 V	TO-92-3	50 nA	700 mV	200	NPN	Through Hole	100 mA
ON Semiconductor 2N5210_S00Z	TO-226-3 TO-92-3	-55 °C	150 °C	625 mW	30 MHz	50 V	TO-92-3	50 nA	700 mV	200	NPN	Through Hole	100 mA
ON Semiconductor 2N5210TA	TO-226-3 TO-92-3	-55 °C	150 °C	625 mW	30 MHz	50 V	TO-92-3	50 nA	700 mV	200	NPN	Through Hole	100 mA
ON Semiconductor 2N5210NMBU	TO-226-3 TO-92-3	-55 °C	150 °C	625 mW	30 MHz	50 V	TO-92-3	50 nA	700 mV	200	NPN	Through Hole	100 mA

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN SiliconReplacement Active Part Number:2N5210

Technical documentation and resources