Technical Specifications
Parameters and characteristics for this part
| Specification | 2N5154S1 |
|---|---|
| Current - Collector (Ic) (Max) | 5 A |
| Current - Collector Cutoff (Max) [Max] | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 70 hFE |
| Mounting Type | Surface Mount |
| Operating Temperature | 200 °C |
| Package / Case | TO-276AA |
| Power - Max [Max] | 35 W |
| Supplier Device Package | SMD5 |
| Transistor Type | NPN |
| Vce Saturation (Max) @ Ib, Ic [Max] | 1.5 V |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Strip | 1 | $ 187.42 | |
| 10 | $ 179.50 | |||
| 25 | $ 175.54 | |||
Description
General part information
2N5154HR Series
The 2N5154HR is a bipolar transistor able to operate under severe environment conditions and radiation exposure. It provides high reliability performance and immunity to the total ionizing dose (TID).
Qualified as per ESCC 5203/010 specification and available in SMD.5 and TO-257 hermetic packages, it is specifically recommended for space and harsh environment applications and suitable for power suppliers, battery switch and linear bias supply circuits.
In case of discrepancies between this datasheet and the relevant agency specification, the latter takes precedence.
Documents
Technical documentation and resources