VS-30ETU12T-N3

Obsolete

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 30A TO220AC

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Obsolete

Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 30A TO220AC

Technical Specifications

Parameters and characteristics for this part

Specification	VS-30ETU12T-N3

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	145 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-220-2
Reverse Recovery Time (trr)	220 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AC
Technology	Standard
Voltage - Forward (Vf) (Max) @ If	2.68 V

Part	Speed	Reverse Recovery Time (trr)	Technology	Supplier Device Package	Voltage - Forward (Vf) (Max) @ If	Package / Case	Mounting Type	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Average Rectified (Io)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max) [Max]
Vishay General Semiconductor - Diodes Division VS-30ETU12T-N3	200 mA 500 ns	220 ns	Standard	TO-220AC	2.68 V	TO-220-2	Through Hole	175 ░C	-55 C	30 A	145 µA
Vishay General Semiconductor - Diodes Division VS-30ETU12-M3	200 mA 500 ns	220 ns	Standard	TO-220AC	2.68 V	TO-220-2	Through Hole	175 ░C	-55 C	30 A	145 µA	1.2 kV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 30A Through Hole TO-220AC

Technical documentation and resources

No documents available