IS61LPS51236A-200TQLI

Obsolete

ISSI, Integrated Silicon Solution Inc

18MB,PIPELINE,SYNC,512K X 36,200MHZ,3.3V OR 2.5V I/O,100 PIN TQFP, ROHS

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IS61LPS51236A-200TQLI

Obsolete

ISSI, Integrated Silicon Solution Inc

18MB,PIPELINE,SYNC,512K X 36,200MHZ,3.3V OR 2.5V I/O,100 PIN TQFP, ROHS

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IS61LPS51236A-200TQLI

Access Time	3.1 ns
Clock Frequency	200 MHz
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	512K x 36
Memory Size	18 Mbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	85 °C
Operating Temperature [Min]	-40 °C
Package / Case	100-LQFP
Supplier Device Package	100-LQFP (14x20)
Technology	SRAM - Synchronous, SDR
Voltage - Supply [Max]	3.465 V
Voltage - Supply [Min]	3.135 V

IS61LPS51236 Series

Part	Package / Case	Voltage - Supply [Max]	Voltage - Supply [Min]	Clock Frequency	Supplier Device Package	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Memory Interface	Memory Format	Access Time	Memory Type	Technology	Memory Organization	Memory Size
ISSI, Integrated Silicon Solution Inc IS61LPS51236A-200B3LI	165-TBGA	3.465 V	3.135 V	200 MHz	165-TFBGA (13x15)	Surface Mount	85 °C	-40 °C	Parallel	SRAM	3.1 ns	Volatile	SRAM - Synchronous SDR	512K x 36	18 Mbit
ISSI, Integrated Silicon Solution Inc IS61LPS51236A-250B3LI	165-TBGA	3.465 V	3.135 V	250 MHz	165-TFBGA (13x15)	Surface Mount	85 °C	-40 °C	Parallel	SRAM	2.6 ns	Volatile	SRAM - Synchronous SDR	512K x 36	18 Mbit
ISSI, Integrated Silicon Solution Inc IS61LPS51236B-200B3LI-TR	165-TBGA	3.465 V	3.135 V	200 MHz	165-TFBGA (13x15)	Surface Mount	85 °C	-40 °C	Parallel	SRAM	3 ns	Volatile	SRAM - Synchronous SDR	512K x 36	18 Mbit
ISSI, Integrated Silicon Solution Inc IS61LPS51236B-200TQLI-TR	100-LQFP	3.465 V	3.135 V	200 MHz	100-LQFP (14x20)	Surface Mount	85 °C	-40 °C	Parallel	SRAM	3 ns	Volatile	SRAM - Synchronous SDR	512K x 36	18 Mbit
ISSI, Integrated Silicon Solution Inc IS61LPS51236A-200B3LI-TR	165-TBGA	3.465 V	3.135 V	200 MHz	165-TFBGA (13x15)	Surface Mount	85 °C	-40 °C	Parallel	SRAM	3.1 ns	Volatile	SRAM - Synchronous SDR	512K x 36	18 Mbit
ISSI, Integrated Silicon Solution Inc IS61LPS51236A-200TQLI-TR	100-LQFP	3.465 V	3.135 V	200 MHz	100-LQFP (14x20)	Surface Mount	85 °C	-40 °C	Parallel	SRAM	3.1 ns	Volatile	SRAM - Synchronous SDR	512K x 36	18 Mbit
ISSI, Integrated Silicon Solution Inc IS61LPS51236A-200TQLI	100-LQFP	3.465 V	3.135 V	200 MHz	100-LQFP (14x20)	Surface Mount	85 °C	-40 °C	Parallel	SRAM	3.1 ns	Volatile	SRAM - Synchronous SDR	512K x 36	18 Mbit
ISSI, Integrated Silicon Solution Inc IS61LPS51236A-200TQI-TR	100-LQFP	3.465 V	3.135 V	200 MHz	100-LQFP (14x20)	Surface Mount	85 °C	-40 °C	Parallel	SRAM	3.1 ns	Volatile	SRAM - Synchronous SDR	512K x 36	18 Mbit
ISSI, Integrated Silicon Solution Inc IS61LPS51236B-200B3LI	165-TBGA	3.465 V	3.135 V	200 MHz	165-TFBGA (13x15)	Surface Mount	85 °C	-40 °C	Parallel	SRAM	3 ns	Volatile	SRAM - Synchronous SDR	512K x 36	18 Mbit
ISSI, Integrated Silicon Solution Inc IS61LPS51236A-250B3	165-TBGA	3.465 V	3.135 V	250 MHz	165-TFBGA (13x15)	Surface Mount	70 °C	0 °C	Parallel	SRAM	2.6 ns	Volatile	SRAM - Synchronous SDR	512K x 36	18 Mbit

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Newark	Each	50	$ 18.24
		100	$ 17.85
		250	$ 17.34

Description

General part information

IS61LPS51236 Series

Internal self-timed write cycle

Individual Byte Write Control and Global Write

Clock controlled, registered address, data and control

Documents

Technical documentation and resources