1N483B

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ON Semiconductor

DIODE GEN PURP 80V 200MA DO35

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ON Semiconductor

DIODE GEN PURP 80V 200MA DO35

Technical Specifications

Parameters and characteristics for this part

Specification	1N483B

Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	25 nA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 °C
Package / Case	Axial, DO-35, DO-204AH
Speed	Any Speed
Speed	200 mA
Supplier Device Package	DO-35
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	80 V
Voltage - Forward (Vf) (Max) @ If	1 V

Small Signal Diode

Part	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package	Current - Reverse Leakage @ Vr	Current - Average Rectified (Io)	Technology	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Package / Case	Mounting Type	Speed	Speed
ON Semiconductor 1N483B	1 V	DO-35	25 nA	200 mA	Standard	80 V	175 °C	Axial DO-204AH DO-35	Through Hole	Any Speed	200 mA
ON Semiconductor 1N483B_T50R	1 V	DO-35	25 nA	200 mA	Standard	80 V	175 °C	Axial DO-204AH DO-35	Through Hole	Any Speed	200 mA

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General part information

Small Signal Diode

Technical documentation and resources

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