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SCT4045DW7HRTL - ROHM SCT3080KW7TL

SCT4045DW7HRTL

Active
Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 31A I(D), 750V, 0.059OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET,

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsCutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICsMoisture Sensitivity Level+46
SCT4045DW7HRTL - ROHM SCT3080KW7TL

SCT4045DW7HRTL

Active
Rohm Semiconductor

POWER FIELD-EFFECT TRANSISTOR, 31A I(D), 750V, 0.059OHM, 1-ELEMENT, N-CHANNEL, SILICON CARBIDE, METAL-OXIDE SEMICONDUCTOR FET,

Deep-Dive with AI

DocumentsCutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICsMoisture Sensitivity Level+46

Technical Specifications

Parameters and characteristics for this part

SpecificationSCT4045DW7HRTL
Current - Continuous Drain (Id) @ 25°C31 A
Drain to Source Voltage (Vdss)750 V
Drive Voltage (Max Rds On, Min Rds On)18 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs63 nC
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds1460 pF
Mounting TypeSurface Mount
Operating Temperature175 °C
Package / CaseD2PAK (7 Leads + Tab), TO-263-8, TO-263CA
Power Dissipation (Max) [Max]93 W
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs [Max]59 mOhm
Supplier Device PackageTO-263-7L
Vgs (Max) [Max]21 V
Vgs (Max) [Min]-4 V
Vgs(th) (Max) @ Id4.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 11.69
10$ 10.26
100$ 8.45
500$ 8.41
Digi-Reel® 1$ 11.69
10$ 10.26
100$ 8.45
500$ 8.41
Tape & Reel (TR) 1000$ 8.60
NewarkEach (Supplied on Cut Tape) 1$ 13.38
10$ 9.90
25$ 9.89
50$ 9.88
100$ 7.51
250$ 7.33
500$ 7.14
1000$ 7.13

Description

General part information

SCT4045DW7HR Series

AEC-Q101 qualified automotive grade product. SCT4045DW7HR is an SiC (Silicon Carbide) trench MOSFET. Features include high voltage resistance, low ON resistance, and fast switching speed.Advantages of ROHM's 4th Generation SiC MOSFETThis series has about 40% reduction in on-resistance and about 50% reduction in switching loss compared to conventional products. The 15V gate-source voltage makes application design easier.

Documents

Technical documentation and resources

Cutting-Edge Web Simulation Tool "ROHM Solution Simulator" Capable of Complete Circuit Verification of Power Devices and Driver ICs

White Paper

Moisture Sensitivity Level

Package Information

Two-Resistor Model for Thermal Simulation

Thermal Design

Measurement Method and Usage of Thermal Resistance RthJC

Thermal Design

θ<sub>JA</sub> and Ψ<sub>JT</sub>

Thermal Design

Calculating Power Loss from Measured Waveforms

Schematic Design & Verification

Judgment Criteria of Thermal Evaluation

Thermal Design

Thermal Resistance Measurement Method for SiC MOSFET

Thermal Design

About Export Administration Regulations (EAR)

Export Information

How to Use LTspice&reg; Models: Tips for Improving Convergence

Schematic Design & Verification

TO-263-7L Inner Structure

Package Information

Method for Monitoring Switching Waveform

Schematic Design & Verification

Compliance of the ELV directive

Environmental Data

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Thermal Design

New SPICE Models with Improved Simulation Speed for Power Semiconductors Are Released!

White Paper

Improvement of switching loss by driver source

Technical Article

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

Simulation Verification to Identify Oscillation between Parallel Dies during Design Phase of Power Modules

Technical Article

Best practices for the connection of Driver Source/Emitter terminals in discrete devices

Schematic Design & Verification

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

TO-263-7L Package Dimensions

Package Information

Thermal Characterization Guidelines for ROHM's 4th Generation SiC MOSFETs

Thermal Design

Power Eco Family: Overview of ROHM's Power Semiconductor Lineup

White Paper

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

Thermal Design

Notes for Temperature Measurement Using Thermocouples

Thermal Design

Types and Features of Transistors

Application Note

Generation Mechanism of Voltage Surge on Commutation Side (Basic)

Technical Article

SiC MOSFET Layout Design Considerations

Technical Article

Precautions during gate-source voltage measurement for SiC MOSFET

Schematic Design & Verification

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

How to Use the Thermal Resistance and Thermal Characteristics Parameters

Thermal Design

TO-263-7L Explanation for Marking

Package Information

Basics and Design Guidelines for Gate Drive Circuits

Schematic Design & Verification

The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level

White Paper

What Is Thermal Design

Thermal Design

5kW High-Efficiency Fan-less Inverter

Schematic Design & Verification

PCB Layout Thermal Design Guide

Thermal Design

Condition of Soldering

Package Information

Precautions for Thermal Resistance of Insulation Sheet

Thermal Design

Anti-Whisker formation

Package Information

Gate-Source Voltage Surge Suppression Methods

Schematic Design & Verification

4 Steps for Successful Thermal Designing of Power Devices

White Paper

How to measure the oscillation occurs between parallel-connected devices

Technical Article

How to Use PLECS Models

Technical Article

Solving the challenges of driving SiC MOSFETs with new packaging developments

White Paper

4<sup>th</sup> Gen SiC MOSFETs Discrete Package: Characteristics and Precautions for Circuit Design Application Note

Schematic Design & Verification

Snubber circuit design methods for SiC MOSFET

Schematic Design & Verification

About Flammability of Materials

Environmental Data