2N6288

Obsolete

ON Semiconductor

7.0 A, 30 V NPN BIPOLAR POWER TRANSISTOR

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Obsolete

ON Semiconductor

7.0 A, 30 V NPN BIPOLAR POWER TRANSISTOR

Technical Specifications

Parameters and characteristics for this part

Specification	2N6288

Current - Collector (Ic) (Max) [Max]	7 A
Current - Collector Cutoff (Max) [Max]	1 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	30
Frequency - Transition	4 MHz
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-65 °C
Package / Case	TO-220-3
Power - Max [Max]	40 W
Supplier Device Package	TO-220
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	3.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

7.0 A, 30 V NPN Bipolar Power Transistor

Part	Power - Max [Max]	Mounting Type	Transistor Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Supplier Device Package	Vce Saturation (Max) @ Ib, Ic	Package / Case	Current - Collector Cutoff (Max) [Max]	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Max]	Operating Temperature [Min]
ON Semiconductor 2N6288	40 W	Through Hole	NPN	30 V	TO-220	3.5 V	TO-220-3	1 mA	4 MHz	7 A	30	150 °C	-65 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

The Power 7A 70 V Bipolar NPN Transistor is designed for use in general-purpose amplifier and switching applications.

Technical documentation and resources