2SD2662T100

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Rohm Semiconductor

TRANS NPN 30V 1.5A MPT3

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Rohm Semiconductor

TRANS NPN 30V 1.5A MPT3

Technical Specifications

Parameters and characteristics for this part

Specification	2SD2662T100

Current - Collector (Ic) (Max) [Max]	1.5 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	270
Frequency - Transition	330 MHz
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-243AA
Power - Max [Max]	2 W
Transistor Type	NPN
Vce Saturation (Max) @ Ib, Ic	350 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	30 V

Part	Frequency - Transition	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Mounting Type	Transistor Type	Operating Temperature	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Current - Collector Cutoff (Max) [Max]
Rohm Semiconductor 2SD2662T100	330 MHz	2 W	1.5 A	Surface Mount	NPN	150 °C	30 V	350 mV	270	TO-243AA	100 nA

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General part information

Bipolar (BJT) Transistor NPN 30 V 1.5 A 330MHz 2 W Surface Mount MPT3

Technical documentation and resources

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