TLP388(D4-GB,E

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Toshiba Semiconductor and Storage

TRANSISTOR OPTOCOUPLER; HIGH VCE

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Toshiba Semiconductor and Storage

TRANSISTOR OPTOCOUPLER; HIGH VCE

Technical Specifications

Parameters and characteristics for this part

Specification	TLP388(D4-GB,E

Current - DC Forward (If) (Max)	50 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max) [Max]	600 %
Current Transfer Ratio (Min) [Min]	100 %
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-55 °C
Output Type	1.81 mOhm
Package / Case	4 Lead, 0.173 in
Package / Case	6-SOIC
Package / Case	4.4 mm
Rise / Fall Time (Typ) [custom]	3 µs
Rise / Fall Time (Typ) [custom]	2 µs
Supplier Device Package	6-SO, 4 Lead
Turn On / Turn Off Time (Typ)	3 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.25 V
Voltage - Output (Max)	350 V

Part	Supplier Device Package	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Input Type	Output Type	Number of Channels	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Package / Case	Package / Case	Package / Case	Current Transfer Ratio (Max) [Max]	Current - DC Forward (If) (Max)	Current Transfer Ratio (Min) [Min]	Voltage - Output (Max)	Turn On / Turn Off Time (Typ)	Current - Output / Channel	Vce Saturation (Max) [Max]	Voltage - Forward (Vf) (Typ)
Toshiba Semiconductor and Storage TLP388(GB,E	6-SO 4 Lead	3 µs	2 µs	DC	1.81 mOhm	1	-55 °C	125 °C	Surface Mount	0.173 in 4 Lead	6-SOIC	4.4 mm	600 %	50 mA	100 %	350 V	3 µs	50 mA	400 mV	1.25 V
Toshiba Semiconductor and Storage TLP388(D4,E	6-SO 4 Lead	3 µs	2 µs	DC	1.81 mOhm	1	-55 °C	125 °C	Surface Mount	0.173 in 4 Lead	6-SOIC	4.4 mm	600 %	50 mA	50 %	350 V	3 µs	50 mA	400 mV	1.25 V
Toshiba Semiconductor and Storage TLP388(E	6-SO 4 Lead	3 µs	2 µs	DC	1.81 mOhm	1	-55 °C	125 °C	Surface Mount	0.173 in 4 Lead	6-SOIC	4.4 mm	600 %	50 mA	50 %	350 V	3 µs	50 mA	400 mV	1.25 V
Toshiba Semiconductor and Storage TLP388(D4-GB,E	6-SO 4 Lead	3 µs	2 µs	DC	1.81 mOhm	1	-55 °C	125 °C	Surface Mount	0.173 in 4 Lead	6-SOIC	4.4 mm	600 %	50 mA	100 %	350 V	3 µs	50 mA	400 mV	1.25 V

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General part information

Optoisolator Transistor Output 5000Vrms 1 Channel 6-SO, 4 Lead

Technical documentation and resources