SS9018GBU

Obsolete

ON Semiconductor

RF 0.05A, VERY HIGH FREQUENCY BA

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Obsolete

ON Semiconductor

RF 0.05A, VERY HIGH FREQUENCY BA

Technical Specifications

Parameters and characteristics for this part

Specification	SS9018GBU

Current - Collector (Ic) (Max) [Max]	50 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	72
Frequency - Transition	1.1 GHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-226-3, TO-92-3
Power - Max [Max]	400 mW
Supplier Device Package	TO-92-3
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	15 V

NPN Epitaxial Silicon Transistor

Part	Power - Max [Max]	Mounting Type	Frequency - Transition	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Transistor Type	Package / Case	Voltage - Collector Emitter Breakdown (Max)	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature
ON Semiconductor SS9018GBU	400 mW	Through Hole	1.1 GHz	50 mA	TO-92-3	NPN	TO-226-3 TO-92-3	15 V	72	150 °C
ON Semiconductor SS9018GBU	400 mW	Through Hole	1.1 GHz	50 mA	TO-92-3	NPN	TO-226-3 TO-92-3	15 V	72	150 °C
ON Semiconductor SS9018FBU	400 mW	Through Hole	1.1 GHz	50 mA	TO-92-3	NPN	TO-226-3 TO-92-3	15 V	54	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

NPN Epitaxial Silicon Transistor

Technical documentation and resources