TN6725A_D75Z

Obsolete

ON Semiconductor

TRANS NPN DARL 50V 1.2A TO-226

Search across all available documentation for this part.

Obsolete

ON Semiconductor

TRANS NPN DARL 50V 1.2A TO-226

Technical Specifications

Parameters and characteristics for this part

Specification	TN6725A_D75Z

Current - Collector (Ic) (Max) [Max]	1.2 A
Current - Collector Cutoff (Max) [Max]	100 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	4000 hFE
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-92-3 Long Body, Formed Leads, TO-226-3
Power - Max [Max]	1 W
Supplier Device Package	TO-226
Vce Saturation (Max) @ Ib, Ic	1.5 V
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Voltage - Collector Emitter Breakdown (Max) [Max]	Package / Case	Vce Saturation (Max) @ Ib, Ic	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Operating Temperature [Min]	Operating Temperature [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	Power - Max [Max]
ON Semiconductor TN6725A_D74Z	1.2 A	TO-226	50 V	Formed Leads TO-226-3 TO-92-3 Long Body	1.5 V	4000 hFE	-55 °C	150 °C	100 nA	Through Hole	1 W
ON Semiconductor TN6725A_D75Z	1.2 A	TO-226	50 V	Formed Leads TO-226-3 TO-92-3 Long Body	1.5 V	4000 hFE	-55 °C	150 °C	100 nA	Through Hole	1 W
ON Semiconductor TN6725A	1.2 A	TO-226-3	50 V	TO-226-3 TO-92-3	1.5 V	4000 hFE	-55 °C	150 °C	100 nA	Through Hole	1 W

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor NPN - Darlington 50 V 1.2 A 1 W Through Hole TO-226

Technical documentation and resources