ZXTS1000NE6TA

Obsolete

Diodes Inc

TRANS PNP SW LOW SAT SOT23-6

Search across all available documentation for this part.

Obsolete

Diodes Inc

TRANS PNP SW LOW SAT SOT23-6

Technical Specifications

Parameters and characteristics for this part

Specification	ZXTS1000NE6TA

Current - Collector (Ic) (Max) [Max]	1.25 A
Current - Collector Cutoff (Max) [Max]	10 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	200
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power - Max [Max]	885 mW
Supplier Device Package	SOT-23-6
Transistor Type	PNP + Diode (Isolated)
Voltage - Collector Emitter Breakdown (Max) [Max]	12 V

Part	Supplier Device Package	Transistor Type	Package / Case	Power - Max [Max]	Current - Collector Cutoff (Max) [Max]	Mounting Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Current - Collector (Ic) (Max) [Max]	Voltage - Collector Emitter Breakdown (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]
Diodes Inc ZXTS1000NE6TA	SOT-23-6	PNP + Diode (Isolated)	SOT-23-6	885 mW	10 nA	Surface Mount	200	1.25 A	12 V	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP + Diode (Isolated) 12 V 1.25 A 220MHz 885 mW Surface Mount SOT-23-6

Technical documentation and resources