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RX3P07BBHC16 - Product dimension image

RX3P07BBHC16

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Rohm Semiconductor

TRANS MOSFET N-CH SI 100V 80A 3-PIN(3+TAB) TO-220AB T/R

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Search across all available documentation for this part.

DocumentsOverview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)Method for Monitoring Switching Waveform +28

RX3P07BBHC16 - Product dimension image

RX3P07BBHC16

Active

Rohm Semiconductor

TRANS MOSFET N-CH SI 100V 80A 3-PIN(3+TAB) TO-220AB T/R

Deep-Dive with AI

DocumentsOverview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)Method for Monitoring Switching Waveform +28

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	RX3P07BBHC16

Current - Continuous Drain (Id) @ 25°C	70 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	38 nC
Input Capacitance (Ciss) (Max) @ Vds	2410 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Rds On (Max) @ Id, Vgs	8.4 mOhm
Supplier Device Package	TO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 4.13
		10	$ 2.74
		100	$ 1.94
		500	$ 1.74
Newark	Each	1	$ 4.49
		10	$ 3.07
		25	$ 2.78
		50	$ 2.48
		100	$ 2.18
		250	$ 2.04
		500	$ 1.88

Description

General part information

RX3P07BBH Series

RX3P07CBH is a power MOSFET with low on-resistance and high power small mold package, suitable for switching.

Documents

Technical documentation and resources

Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)

Technical Article

Method for Monitoring Switching Waveform

Schematic Design & Verification

Types and Features of Transistors

Application Note

What is a Thermal Model? (Transistor)

Part Explanation

Application Note

RX3P07BBH ESD Data

Characteristics Data

Measurement Method and Usage of Thermal Resistance RthJC

TO-220AB Explanation for Marking

Package Information

About Export Regulations

Export Information

How to Use LTspice® Models: Tips for Improving Convergence

Schematic Design & Verification

Impedance Characteristics of Bypass Capacitor

Schematic Design & Verification

Moisture Sensitivity Level - Transistors

Package Information

Method for Calculating Junction Temperature from Transient Thermal Resistance Data

Notes for Temperature Measurement Using Thermocouples

Importance of Probe Calibration When Measuring Power: Deskew

Schematic Design & Verification

About Flammability of Materials

Environmental Data

Condition of Soldering / Land Pattern Reference

Package Information

Two-Resistor Model for Thermal Simulation

PCB Layout Thermal Design Guide

TO-220AB Inner Structure

Package Information

Example of Heat Dissipation Design for TO Packages: Effect of Heat Dissipation Materials

List of Transistor Package Thermal Resistance

RX3P07BBH Data Sheet

Report of SVHC under REACH Regulation

Environmental Data

MOSFET Gate Drive Current Setting for Motor Driving

Technical Article

Temperature derating method for Safe Operating Area (SOA)

Schematic Design & Verification

TO-220AB Reliability Test Result

Manufacturing Data

What Is Thermal Design

Datasheet

Technical Data Sheet EN

RX3P07BBH Series

Nch 100V 120A, TO-220AB, Power MOSFET

Part	Package / Case	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Technology	FET Type	Vgs (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Drain to Source Voltage (Vdss)	Rds On (Max) @ Id, Vgs	Operating Temperature	Supplier Device Package	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [x]	Power Dissipation (Max)
Rohm Semiconductor RX3P07BBHC16	TO-220-3	70 A	2410 pF	6 V 10 V	MOSFET (Metal Oxide)	N-Channel	20 V	38 nC	100 V	8.4 mOhm	150 °C	TO-220AB	Through Hole
Rohm Semiconductor RX3P07CBHC16	TO-220-3	70 A	4650 pF	6 V 10 V	MOSFET (Metal Oxide)	N-Channel	20 V		100 V	5.2 mOhm	150 °C	TO-220AB	Through Hole	73 nC	135 W