GigaDevice Semiconductor (HK) Limited | 133 MHz | Non-Volatile | QPI Quad I/O SPI | 1024 KB | FLASH - NOR (SLC) | -40 °C | 125 °C | FLASH | 6 ns | 1 M | 8 bits | Surface Mount | 2 V | 1.65 V | 100 µs | 4 ms | 8-USON (3x2) | 8-XFDFN Exposed Pad | | |
GigaDevice Semiconductor (HK) Limited | 104 MHz | Non-Volatile | SPI - Quad I/O | 1024 KB | FLASH - NOR | -40 °C | 85 °C | FLASH | | 1 M | 8 bits | Surface Mount | 2.1 V | 1.65 V | 50 µs | 2.4 ms | 8-SOP | 8-SOIC | 5.3 mm | 0.209 " |
GigaDevice Semiconductor (HK) Limited | 104 MHz | Non-Volatile | SPI - Quad I/O | 1024 KB | FLASH - NOR | -40 °C | 85 °C | FLASH | | 1 M | 8 bits | Surface Mount | 2.1 V | 1.65 V | 50 µs | 2.4 ms | 8-SOP | 8-SOIC | 3.9 mm | 0.154 in |
GigaDevice Semiconductor (HK) Limited | 104 MHz | Non-Volatile | SPI - Quad I/O | 1024 KB | FLASH - NOR | -40 °C | 85 °C | FLASH | | 1 M | 8 bits | Surface Mount | 2.1 V | 1.65 V | 50 µs | 2.4 ms | 8-USON (2x3) | 8-XFDFN Exposed Pad | | |
GigaDevice Semiconductor (HK) Limited | | | | | FLASH - NOR | | | FLASH | | | | | | | | | | | | |
GigaDevice Semiconductor (HK) Limited | 133 MHz | Non-Volatile | QPI Quad I/O SPI | 1024 KB | FLASH - NOR (SLC) | -40 °C | 85 °C | FLASH | 6 ns | 1 M | 8 bits | Surface Mount | 2 V | 1.65 V | 60 µs | 2.4 ms | 8-USON (3x2) | 8-XFDFN Exposed Pad | | |
GigaDevice Semiconductor (HK) Limited | 90 MHz | Non-Volatile | SPI - Quad I/O | 1024 KB | FLASH - NOR (SLC) | -40 °C | 105 °C | FLASH | 6 ns | 1 M | 8 bits | Surface Mount | 2.1 V | 1.65 V | 80 µs | 3 ms | 8-USON (3x4) | 8-UDFN Exposed Pad | | |
GigaDevice Semiconductor (HK) Limited | 133 MHz | Non-Volatile | QPI Quad I/O SPI | 1024 KB | FLASH - NOR (SLC) | -40 °C | 125 °C | FLASH | 6 ns | 1 M | 8 bits | Surface Mount | 2 V | 1.65 V | 100 µs | 4 ms | 8-SOP | 8-SOIC | 3.9 mm | 0.154 in |
GigaDevice Semiconductor (HK) Limited | 133 MHz | Non-Volatile | QPI Quad I/O SPI | 1024 KB | FLASH - NOR (SLC) | -40 °C | 85 °C | FLASH | 6 ns | 1 M | 8 bits | Surface Mount | 2 V | 1.65 V | 60 µs | 2.4 ms | 8-SOP | 8-SOIC | 5.3 mm | 0.209 " |