
2SAR544P5T100
ActiveRohm Semiconductor
TRANS GP BJT PNP 80V 2.5A 2000MW 4-PIN(3+TAB) MPT T/R
Deep-Dive with AI
Search across all available documentation for this part.

2SAR544P5T100
ActiveRohm Semiconductor
TRANS GP BJT PNP 80V 2.5A 2000MW 4-PIN(3+TAB) MPT T/R
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | 2SAR544P5T100 |
|---|---|
| Current - Collector (Ic) (Max) [Max] | 2.5 A |
| Current - Collector Cutoff (Max) [Max] | 1 µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce [Min] | 120 |
| Frequency - Transition | 280 MHz |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | TO-243AA |
| Power - Max [Max] | 500 mW |
| Transistor Type | PNP |
| Vce Saturation (Max) @ Ib, Ic [Max] | 400 mV |
| Voltage - Collector Emitter Breakdown (Max) [Max] | 80 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
2SAR544P5 Series
Various products are available in lineup developed focusing on energy-saving and high reliability as main concepts, covering from ultra-compact packages to power-packages to meet the needs in market.
Documents
Technical documentation and resources