TLP620-4(HITACHI,F

Obsolete

Toshiba Semiconductor and Storage

PHOTOCOUPLER

Search across all available documentation for this part.

Obsolete

Toshiba Semiconductor and Storage

PHOTOCOUPLER

Technical Specifications

Parameters and characteristics for this part

Specification	TLP620-4(HITACHI,F

Current - DC Forward (If) (Max)	50 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max) [Max]	600 %
Current Transfer Ratio (Min) [Min]	50 %
Mounting Type	Through Hole
Number of Channels	4
Operating Temperature [Max]	100 °C
Operating Temperature [Min]	-55 °C
Output Type	1.81 mOhm
Package / Case	0.3 in
Package / Case	16-DIP
Package / Case	7.62 mm
Rise / Fall Time (Typ) [custom]	3 µs
Rise / Fall Time (Typ) [custom]	2 µs
Supplier Device Package	16-DIP
Turn On / Turn Off Time (Typ)	3 µs
Vce Saturation (Max) [Max]	400 mV
Voltage - Forward (Vf) (Typ)	1.15 V
Voltage - Output (Max) [Max]	55 V

Part	Current Transfer Ratio (Max) [Max]	Mounting Type	Rise / Fall Time (Typ) [custom]	Rise / Fall Time (Typ) [custom]	Vce Saturation (Max) [Max]	Current - DC Forward (If) (Max)	Turn On / Turn Off Time (Typ)	Current Transfer Ratio (Min) [Min]	Number of Channels [custom]	Voltage - Output (Max) [Max]	Operating Temperature [Max]	Operating Temperature [Min]	Supplier Device Package	Voltage - Forward (Vf) (Typ)	Output Type	Current - Output / Channel	Package / Case	Package / Case	Package / Case	Number of Channels
Toshiba Semiconductor and Storage TLP620-2(GB-TP1,F)	600 %	Surface Mount	3 µs	2 µs	400 mV	50 mA	3 µs	100 %	2	55 V	100 °C	-55 °C	8-SMD	1.15 V	1.81 mOhm	50 mA
Toshiba Semiconductor and Storage TLP620-2(D4-GB,F)	600 %	Through Hole	3 µs	2 µs	400 mV	50 mA	3 µs	100 %	2	55 V	100 °C	-55 °C	8-DIP	1.15 V	1.81 mOhm	50 mA	0.3 in	8-DIP	7.62 mm
Toshiba Semiconductor and Storage TLP620-2(LF1,F)	600 %	Surface Mount	3 µs	2 µs	400 mV	50 mA	3 µs	50 %	2	55 V	100 °C	-55 °C	8-SMD	1.15 V	1.81 mOhm	50 mA
Toshiba Semiconductor and Storage TLP620-4(D4-LF1,F)	600 %	Surface Mount	3 µs	2 µs	400 mV	50 mA	3 µs	50 %		55 V	100 °C	-55 °C	16-SMD	1.15 V	1.81 mOhm	50 mA		16-SMD		4
Toshiba Semiconductor and Storage TLP620-4(HITACHI,F	600 %	Through Hole	3 µs	2 µs	400 mV	50 mA	3 µs	50 %		55 V	100 °C	-55 °C	16-DIP	1.15 V	1.81 mOhm	50 mA	0.3 in	16-DIP	7.62 mm	4

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Optoisolator Transistor Output 5000Vrms 4 Channel 16-DIP

Technical documentation and resources

No documents available