2SC5820WU-TL-E

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Renesas Electronics Corporation

SMALL SIGNAL BIP-TRSS FOR HIGH FREQUENCY AMPLIFIER

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Renesas Electronics Corporation

SMALL SIGNAL BIP-TRSS FOR HIGH FREQUENCY AMPLIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	2SC5820WU-TL-E

Current - Collector (Ic) (Max) [Max]	35 mA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	20 GHz
Gain	17.5 dBi
Mounting Type	Surface Mount
Noise Figure (dB Typ @ f)	1.15 dB
Operating Temperature	150 °C
Package / Case	SC-82A, SOT-343
Power - Max [Max]	100 mW
Supplier Device Package	CMPAK-4
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4 V

Small Signal Bip-TRSs for High Frequency Amplifier

Part	Current - Collector (Ic) (Max) [Max]	Supplier Device Package	Operating Temperature	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Package / Case	Noise Figure (dB Typ @ f)	Voltage - Collector Emitter Breakdown (Max)	Gain	Transistor Type	Mounting Type	Frequency - Transition	Power - Max [Max]
Renesas Electronics Corporation 2SC5820WU-TL-H	35 mA	CMPAK-4	150 °C	70	SC-82A SOT-343	1.15 dB	4 V	17.5 dBi	NPN	Surface Mount	20 GHz	100 mW
Renesas Electronics Corporation 2SC5820WU-TL-E	35 mA	CMPAK-4	150 °C	70	SC-82A SOT-343	1.15 dB	4 V	17.5 dBi	NPN	Surface Mount	20 GHz	100 mW

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	1159	$ 0.26

General part information

Small Signal Bip-TRSs for High Frequency Amplifier

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