HER1007G

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Taiwan Semiconductor Corporation

80NS, 10A, 800V, HIGH EFFICIENT RECOVERY RECTIFIER

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Taiwan Semiconductor Corporation

80NS, 10A, 800V, HIGH EFFICIENT RECOVERY RECTIFIER

Technical Specifications

Parameters and characteristics for this part

Specification	HER1007G

Current - Average Rectified (Io) (per Diode)	10 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	TO-220-3
Reverse Recovery Time (trr)	80 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-220AB
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	800 V
Voltage - Forward (Vf) (Max) @ If	1.7 V

Part	Voltage - Forward (Vf) (Max) @ If	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Diode Configuration	Reverse Recovery Time (trr)	Supplier Device Package	Speed	Package / Case	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Technology	Mounting Type
Taiwan Semiconductor Corporation HER1007G	1.7 V	150 °C	-55 °C	10 µA	1 Pair Common Cathode	80 ns	TO-220AB	200 mA 500 ns	TO-220-3	800 V	10 A	Standard	Through Hole

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode Array 1 Pair Common Cathode 800 V 10A Through Hole TO-220-3

Technical documentation and resources