RSJ250P10TL
ActiveRohm Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 100V, 0.063OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, LPTS, 3 PIN
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RSJ250P10TL
ActiveRohm Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 25A I(D), 100V, 0.063OHM, 1-ELEMENT, P-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, LPTS, 3 PIN
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Technical Specifications
Parameters and characteristics for this part
| Specification | RSJ250P10TL |
|---|---|
| Current - Continuous Drain (Id) @ 25°C | 25 A |
| Drain to Source Voltage (Vdss) | 100 V |
| Drive Voltage (Max Rds On, Min Rds On) [Max] | 4 V |
| Drive Voltage (Max Rds On, Min Rds On) [Min] | 10 V |
| FET Type | P-Channel |
| Gate Charge (Qg) (Max) @ Vgs [Max] | 60 nC |
| Input Capacitance (Ciss) (Max) @ Vds [Max] | 8000 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263AB, TO-263-3 |
| Power Dissipation (Max) [Max] | 50 W |
| Rds On (Max) @ Id, Vgs | 63 mOhm |
| Supplier Device Package | LPTS |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) @ Id [Max] | 2.5 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Description
General part information
RSJ250P10 Series
MOSFET, one of Field Effect Transistors. ROHM has low current type power MOSFETs of high-efficiency / high breakdown resistance for switching power supply to meet various needs in the market.
Documents
Technical documentation and resources