2SA1428-Y(T2TR,A,F

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 50V 2A MSTM

Search across all available documentation for this part.

Obsolete

Toshiba Semiconductor and Storage

TRANS PNP 50V 2A MSTM

Technical Specifications

Parameters and characteristics for this part

Specification	2SA1428-Y(T2TR,A,F

Current - Collector (Ic) (Max) [Max]	2 A
Current - Collector Cutoff (Max) [Max]	1 µA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	70
Frequency - Transition	100 MHz
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-71
Power - Max [Max]	900 mW
Supplier Device Package	MSTM
Transistor Type	PNP
Vce Saturation (Max) @ Ib, Ic	500 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Current - Collector (Ic) (Max) [Max]	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Mounting Type	Voltage - Collector Emitter Breakdown (Max) [Max]	Transistor Type	Operating Temperature	Package / Case	Current - Collector Cutoff (Max) [Max]	Supplier Device Package
Toshiba Semiconductor and Storage 2SA1428-Y(T2TR,A,F	2 A	70	900 mW	500 mV	100 MHz	Through Hole	50 V	PNP	150 °C	SC-71	1 µA	MSTM
Toshiba Semiconductor and Storage 2SA1428-Y,T2F(M	2 A	70	900 mW	500 mV	100 MHz	Through Hole	50 V	PNP	150 °C	SC-71	1 µA	MSTM
Toshiba Semiconductor and Storage 2SA1428-Y,T2F(J	2 A	70	900 mW	500 mV	100 MHz	Through Hole	50 V	PNP	150 °C	SC-71	1 µA	MSTM

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Bipolar (BJT) Transistor PNP 50 V 2 A 100MHz 900 mW Through Hole MSTM

Technical documentation and resources