BAV103 L1G

Active

Taiwan Semiconductor Corporation

DIODE GP 250V 200MA MINI MELF

Search across all available documentation for this part.

Active

Taiwan Semiconductor Corporation

DIODE GP 250V 200MA MINI MELF

Technical Specifications

Parameters and characteristics for this part

Specification	BAV103 L1G

Capacitance @ Vr, F	4 pF
Current - Average Rectified (Io)	200 mA
Current - Reverse Leakage @ Vr	100 nA
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	200 C
Operating Temperature - Junction [Min]	-65 C
Package / Case	MINI-MELF, DO-213AC, SOD-80
Speed	Any Speed
Speed	200 mA
Supplier Device Package	Mini MELF
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	250 V
Voltage - Forward (Vf) (Max) @ If	1 V

Part	Technology	Current - Average Rectified (Io)	Speed	Speed	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Capacitance @ Vr, F	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Mounting Type
Taiwan Semiconductor Corporation BAV103 L0G	Standard	200 mA	Any Speed	200 mA	100 nA	1 V	4 pF	Mini MELF	200 C	-65 C	250 V	DO-213AC MINI-MELF SOD-80	Surface Mount
Taiwan Semiconductor Corporation BAV103 L1G	Standard	200 mA	Any Speed	200 mA	100 nA	1 V	4 pF	Mini MELF	200 C	-65 C	250 V	DO-213AC MINI-MELF SOD-80	Surface Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 250 V 200mA Surface Mount Mini MELF

Technical documentation and resources

No documents available