AOI4286

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 4A/14A TO251A

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 100V 4A/14A TO251A

Technical Specifications

Parameters and characteristics for this part

Specification	AOI4286

Current - Continuous Drain (Id) @ 25°C	4 A, 14 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	390 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-251-3 Stub Leads, IPAK
Power Dissipation (Max)	30 W, 2.5 W
Rds On (Max) @ Id, Vgs	68 mOhm
Supplier Device Package	TO-251A
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.9 V

Part	Current - Continuous Drain (Id) @ 25°C	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Technology	Package / Case	FET Type	Mounting Type	Vgs(th) (Max) @ Id	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Input Capacitance (Ciss) (Max) @ Vds
Alpha & Omega Semiconductor Inc. AOI4286	4 A 14 A	4.5 V 10 V	10 nC	MOSFET (Metal Oxide)	TO-251-3 Stub Leads IPAK	N-Channel	Through Hole	2.9 V	TO-251A	100 V	20 V	68 mOhm	-55 °C	175 ░C	2.5 W 30 W	390 pF

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