PJF4NA65H_T0_00001

NRND

Panjit International Inc.

650V N-CHANNEL MOSFET

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NRND

Panjit International Inc.

650V N-CHANNEL MOSFET

Technical Specifications

Parameters and characteristics for this part

Specification	PJF4NA65H_T0_00001

Current - Continuous Drain (Id) @ 25°C	3 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	16.1 nC
Input Capacitance (Ciss) (Max) @ Vds	423 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	23 W
Rds On (Max) @ Id, Vgs	3.75 Ohm
Supplier Device Package	ITO-220AB
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Supplier Device Package	Mounting Type	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]
Panjit International Inc. PJF4NA65H_T0_00001	ITO-220AB	Through Hole	30 V	650 V	10 V	N-Channel	16.1 nC	23 W	3 A	MOSFET (Metal Oxide)	423 pF	4 V	3.75 Ohm	TO-220-3 Full Pack	-55 °C	150 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	2000	$ 0.31

General part information

N-Channel 650 V 3A (Ta) 23W (Tc) Through Hole ITO-220AB

Technical documentation and resources