ZXMP3A17DN8TA

Active

Diodes Inc

TRANSISTOR MOSFET ARRAY DUAL P-CH 30V 4.4A 8-PIN SOIC T/R

Search across all available documentation for this part.

Active

Diodes Inc

TRANSISTOR MOSFET ARRAY DUAL P-CH 30V 4.4A 8-PIN SOIC T/R

Technical Specifications

Parameters and characteristics for this part

Specification	ZXMP3A17DN8TA

Configuration	2 P-Channel
Current - Continuous Drain (Id) @ 25°C	4.4 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Qg) (Max) @ Vgs	8.28 nC
Input Capacitance (Ciss) (Max) @ Vds	630 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power - Max [Max]	2.1 W
Rds On (Max) @ Id, Vgs	70 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	1 V

Dual P-Channel Enhancement Mode MOSFET

Part	Supplier Device Package	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Package / Case [y]	Package / Case [x]	Power - Max [Max]	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Configuration	Rds On (Max) @ Id, Vgs	Gate Charge (Qg) (Max) @ Vgs	Technology	Operating Temperature [Min]	Operating Temperature [Max]	Vgs(th) (Max) @ Id
Diodes Inc ZXMP3A17DN8TA	8-SO	630 pF	8-SOIC	3.9 mm	0.154 in	2.1 W	30 V	Surface Mount	4.4 A	2 P-Channel	70 mOhm	8.28 nC	MOSFET (Metal Oxide)	-55 °C	150 °C	1 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Dual P-Channel Enhancement Mode MOSFET

Technical documentation and resources